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Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In(0.52)Al(0.48)As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditio...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6566529/ https://ncbi.nlm.nih.gov/pubmed/31108890 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12101621 |
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