Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshi...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Wang, Ying, Sheng, Xinzhi, Guo, Qinglin, Li, Xiaoli, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Maidaniuk, Yurii, Ware, Morgan E., Salamo, Gregory J., Liang, Baolai, Huffaker, Diana L.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5371541/
https://ncbi.nlm.nih.gov/pubmed/28359139
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1998-8
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