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A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group UK
2021
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7969762/ https://ncbi.nlm.nih.gov/pubmed/33731824 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-85690-9 |
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