Loading...
Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. W...
Na minha lista:
| Udgivet i: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Publishing Group UK
2019
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6917803/ https://ncbi.nlm.nih.gov/pubmed/31848416 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55874-5 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|