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Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. W...
Shranjeno v:
| izdano v: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group UK
2019
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6917803/ https://ncbi.nlm.nih.gov/pubmed/31848416 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55874-5 |
| Oznake: |
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