Phase‐Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications

Abstract Volatile threshold resistive switching and neuronal oscillations in phase‐change materials, specifically those undergoing ‘metal‐to‐insulator’ transitions, offer unique attributes such as fast and low‐field volatile switching, tunability, and stochastic dynamics. These characteristics are p...

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Detalhes bibliográficos

Principais autores:	Huandong Chen, Jayakanth Ravichandran
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2025-11-01
coleção:	Advanced Science
Assuntos:	charge‐density‐wave correlated materials metal‐to‐insulator transition neuronal functionalities phase‐change materials volatile switching
Acesso em linha:	https://doi.org/10.1002/advs.202503209
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