Phase‐Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications

Abstract Volatile threshold resistive switching and neuronal oscillations in phase‐change materials, specifically those undergoing ‘metal‐to‐insulator’ transitions, offer unique attributes such as fast and low‐field volatile switching, tunability, and stochastic dynamics. These characteristics are p...

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Main Authors: Huandong Chen, Jayakanth Ravichandran
Formato: Artigo
Idioma:Inglês
Publicado: Wiley 2025-11-01
Series:Advanced Science
Assuntos:
charge‐density‐wave
correlated materials
metal‐to‐insulator transition
neuronal functionalities
phase‐change materials
volatile switching
Acceso en liña:https://doi.org/10.1002/advs.202503209
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