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Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications
The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have studied a high growth rate process to grow a thick epitaxial layer (250 µm) of 4H-SiC and, in o...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7922429/ https://ncbi.nlm.nih.gov/pubmed/33669492 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14040976 |
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