A carregar...
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investi...
Na minha lista:
| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7919267/ https://ncbi.nlm.nih.gov/pubmed/33578892 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14040849 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|