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Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investi...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2021
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7919267/ https://ncbi.nlm.nih.gov/pubmed/33578892 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14040849 |
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