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Noise Tailoring in Memristive Filaments
[Image: see text] In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To this end, the resistance and frequency scaling of the low-frequency 1/f-type noise properties are studied in representative mainstream material systems. It is...
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| Publicado no: | ACS Appl Mater Interfaces |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2021
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7899176/ https://ncbi.nlm.nih.gov/pubmed/33533590 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c21156 |
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