Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place the...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Sci Rep
Prif Awduron: Pavunny, Shojan P., Yeats, Andrew L., Banks, Hunter B., Bielejec, Edward, Myers-Ward, Rachael L., DeJarld, Matthew T., Bracker, Allan S., Gaskill, D. Kurt, Carter, Samuel G.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group UK 2021
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC7878855/
https://ncbi.nlm.nih.gov/pubmed/33574463
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-82832-x
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