Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place the...

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Publicat a:Sci Rep
Autors principals: Pavunny, Shojan P., Yeats, Andrew L., Banks, Hunter B., Bielejec, Edward, Myers-Ward, Rachael L., DeJarld, Matthew T., Bracker, Allan S., Gaskill, D. Kurt, Carter, Samuel G.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2021
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7878855/
https://ncbi.nlm.nih.gov/pubmed/33574463
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-82832-x
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