Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place the...

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Veröffentlicht in:Sci Rep
Hauptverfasser: Pavunny, Shojan P., Yeats, Andrew L., Banks, Hunter B., Bielejec, Edward, Myers-Ward, Rachael L., DeJarld, Matthew T., Bracker, Allan S., Gaskill, D. Kurt, Carter, Samuel G.
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group UK 2021
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Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7878855/
https://ncbi.nlm.nih.gov/pubmed/33574463
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-82832-x
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