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Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place the...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7878855/ https://ncbi.nlm.nih.gov/pubmed/33574463 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-82832-x |
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