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The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabri...
Bewaard in:
| Gepubliceerd in: | Materials (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2021
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7867016/ https://ncbi.nlm.nih.gov/pubmed/33572683 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14030663 |
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