Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes

The defects and electrical characteristics of 4H-SiC JBS diodes irradiated by 2 MeV protons under irradiation temperatures of 100–400 K were studied. Forward and reverse current–voltage (I–V), capacitance–voltage (C–V), and deep-level transient spectroscopy (DLTS) measurements were performed to stud...

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Главные авторы: Liansheng Zhao, Yidan Tang, Yun Bai, Menglin Qiu, Zhikang Wu, Yu Yang, Chengyue Yang, Xiaoli Tian, Xinyu Liu
Формат: Artigo
Язык:Inglês
Опубликовано: MDPI AG 2022-04-01
Серии:Electronics
Предметы:
silicon carbide
Schottky barrier diode
irradiation temperature
irradiation defects
Online-ссылка:https://www.mdpi.com/2079-9292/11/9/1341
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