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Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material

The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a lo...

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Détails bibliographiques
Publié dans:Appl Microsc
Auteur principal: An, Byeong-Seon
Format: Artigo
Langue:Inglês
Publié: Springer Singapore 2019
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC7818282/
https://ncbi.nlm.nih.gov/pubmed/33580433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s42649-019-0021-5
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