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Electron beam irradiation induced crystallization behavior of amorphous Ge(2)Sb(2)Te(5) chalcogenide material
The crystallization of amorphous Ge(2)Sb(2)Te(5) phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a lo...
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| Udgivet i: | Appl Microsc |
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| Hovedforfatter: | |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer Singapore
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7818282/ https://ncbi.nlm.nih.gov/pubmed/33580433 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s42649-019-0021-5 |
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