Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...

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Publicado en:Sci Rep
Main Authors: Wang, Dengkui, Gao, Xian, Tang, Jilong, Fang, Xuan, Fang, Dan, Wang, Xinwei, Lin, Fengyuan, Wang, Xiaohua, Chen, Rui, Wei, Zhipeng
Formato: Artigo
Idioma:Inglês
Publicado: Nature Publishing Group UK 2021
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Article
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://ncbi.nlm.nih.gov/pubmed/33436975
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-80796-y
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