Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Wang, Dengkui, Gao, Xian, Tang, Jilong, Fang, Xuan, Fang, Dan, Wang, Xinwei, Lin, Fengyuan, Wang, Xiaohua, Chen, Rui, Wei, Zhipeng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2021
Assuntos:
Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://ncbi.nlm.nih.gov/pubmed/33436975
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-80796-y
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados