Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

Lignende værker

• Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
  af: Son, Hoki, et al.
  Udgivet: (2021)
• Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
  af: Pozina, Galia, et al.
  Udgivet: (2018)
• Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
  af: Tsykaniuk, Bogdan I., et al.
  Udgivet: (2017)
• Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
  af: Tasi, Chi-Tsung, et al.
  Udgivet: (2017)
• Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
  af: Tsykaniuk, Bogdan I., et al.
  Udgivet: (2017)