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Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulat...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7746736/ https://ncbi.nlm.nih.gov/pubmed/33335228 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-79154-9 |
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