High zT and Its Origin in Sb‐doped GeTe Single Crystals

A record high zT of 2.2 at 740 K is reported in Ge(0.92)Sb(0.08)Te single crystals, with an optimal hole carrier concentration ≈4 × 10(20) cm(−3) that simultaneously maximizes the power factor (PF) ≈56 µW cm(−1 )K(−2) and minimizes the thermal conductivity ≈1.9 Wm(−1) K(−1). In addition to the prese...

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Veröffentlicht in:Adv Sci (Weinh)
Hauptverfasser: Vankayala, Ranganayakulu K., Lan, Tian‐Wey, Parajuli, Prakash, Liu, Fengjiao, Rao, Rahul, Yu, Shih Hsun, Hung, Tsu‐Lien, Lee, Chih‐Hao, Yano, Shin‐ichiro, Hsing, Cheng‐Rong, Nguyen, Duc‐Long, Chen, Cheng‐Lung, Bhattacharya, Sriparna, Chen, Kuei‐Hsien, Ou, Min‐Nan, Rancu, Oliver, Rao, Apparao M., Chen, Yang‐Yuan
Format: Artigo
Sprache:Inglês
Veröffentlicht: John Wiley and Sons Inc. 2020
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Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7740100/
https://ncbi.nlm.nih.gov/pubmed/33344133
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202002494
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