High zT and Its Origin in Sb‐doped GeTe Single Crystals

A record high zT of 2.2 at 740 K is reported in Ge(0.92)Sb(0.08)Te single crystals, with an optimal hole carrier concentration ≈4 × 10(20) cm(−3) that simultaneously maximizes the power factor (PF) ≈56 µW cm(−1 )K(−2) and minimizes the thermal conductivity ≈1.9 Wm(−1) K(−1). In addition to the prese...

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Bibliografske podrobnosti
izdano v:Adv Sci (Weinh)
Main Authors: Vankayala, Ranganayakulu K., Lan, Tian‐Wey, Parajuli, Prakash, Liu, Fengjiao, Rao, Rahul, Yu, Shih Hsun, Hung, Tsu‐Lien, Lee, Chih‐Hao, Yano, Shin‐ichiro, Hsing, Cheng‐Rong, Nguyen, Duc‐Long, Chen, Cheng‐Lung, Bhattacharya, Sriparna, Chen, Kuei‐Hsien, Ou, Min‐Nan, Rancu, Oliver, Rao, Apparao M., Chen, Yang‐Yuan
Format: Artigo
Jezik:Inglês
Izdano: John Wiley and Sons Inc. 2020
Teme:
Full Papers
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC7740100/
https://ncbi.nlm.nih.gov/pubmed/33344133
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202002494
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