High zT and Its Origin in Sb‐doped GeTe Single Crystals

A record high zT of 2.2 at 740 K is reported in Ge(0.92)Sb(0.08)Te single crystals, with an optimal hole carrier concentration ≈4 × 10(20) cm(−3) that simultaneously maximizes the power factor (PF) ≈56 µW cm(−1 )K(−2) and minimizes the thermal conductivity ≈1.9 Wm(−1) K(−1). In addition to the prese...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Vankayala, Ranganayakulu K., Lan, Tian‐Wey, Parajuli, Prakash, Liu, Fengjiao, Rao, Rahul, Yu, Shih Hsun, Hung, Tsu‐Lien, Lee, Chih‐Hao, Yano, Shin‐ichiro, Hsing, Cheng‐Rong, Nguyen, Duc‐Long, Chen, Cheng‐Lung, Bhattacharya, Sriparna, Chen, Kuei‐Hsien, Ou, Min‐Nan, Rancu, Oliver, Rao, Apparao M., Chen, Yang‐Yuan
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2020
Assuntos:
Full Papers
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7740100/
https://ncbi.nlm.nih.gov/pubmed/33344133
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202002494
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados