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Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor
1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step prepara...
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| Publicado no: | Beilstein J Nanotechnol |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7736687/ https://ncbi.nlm.nih.gov/pubmed/33364143 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.11.166 |
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