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Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si(1−x)Ge(x) structures, containing either...
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| Pubblicato in: | Sensors (Basel) |
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| Autori principali: | , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2020
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7730890/ https://ncbi.nlm.nih.gov/pubmed/33276481 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s20236884 |
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