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MoS(2) thin films from a (N(t)Bu)(2)(NMe(2))(2)Mo and 1-propanethiol atomic layer deposition process
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS(2) rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to scalable and controllable formation...
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| Publicado no: | J Vac Sci Technol A |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7713506/ https://ncbi.nlm.nih.gov/pubmed/33281278 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1116/1.5059424 |
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