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Improved Current Density and Contact Resistance in Bilayer MoSe(2) Field Effect Transistors by AlO(x) Capping

[Image: see text] Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS(2), grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe...

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Detalhes bibliográficos
Publicado no:ACS Appl Mater Interfaces
Main Authors: Somvanshi, Divya, Ber, Emanuel, Bailey, Connor S., Pop, Eric, Yalon, Eilam
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2020
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7588022/
https://ncbi.nlm.nih.gov/pubmed/32678569
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c09541
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