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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materia...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group UK
2020
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7566635/ https://ncbi.nlm.nih.gov/pubmed/33060651 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-74030-y |
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