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Development of gateless quantum Hall checkerboard p-n junction devices
Measurements of fractional multiples of the ν = 2 plateau quantized Hall resistance (R(H) ≈ 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance...
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| Publicado no: | J Phys D Appl Phys |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7558461/ https://ncbi.nlm.nih.gov/pubmed/33071355 |
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