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Development of gateless quantum Hall checkerboard p-n junction devices
Measurements of fractional multiples of the ν = 2 plateau quantized Hall resistance (R(H) ≈ 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance...
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| 出版年: | J Phys D Appl Phys |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7558461/ https://ncbi.nlm.nih.gov/pubmed/33071355 |
| タグ: |
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