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Development of gateless quantum Hall checkerboard p-n junction devices

Measurements of fractional multiples of the ν = 2 plateau quantized Hall resistance (R(H) ≈ 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance...

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Xehetasun bibliografikoak
Argitaratua izan da:J Phys D Appl Phys
Egile Nagusiak: Patel, Dinesh K., Marzano, Martina, Liu, Chieh-I, Kruskopf, Mattias, Elmquist, Randolph E., Liang, Chi-Te, Rigosi, Albert F.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: 2020
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC7558461/
https://ncbi.nlm.nih.gov/pubmed/33071355
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