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Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs m...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7558084/ https://ncbi.nlm.nih.gov/pubmed/32916832 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10091782 |
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