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Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devic...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Wang, Dapeng, Furuta, Mamoru, Tomai, Shigekazu, Yano, Koki
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7221933/
https://ncbi.nlm.nih.gov/pubmed/32230775
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10040617
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