Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

Lignende værker

• Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
  af: Wang, Dapeng, et al.
  Udgivet: (2018)
• Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
  af: Wang, Dapeng, et al.
  Udgivet: (2020)
• Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
  af: Dapeng Wang, et al.
  Udgivet: (2018-04-01)
• Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
  af: Wang, Dapeng, et al.
  Udgivet: (2018)
• Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress
  af: Dongsheng Hong, et al.
  Udgivet: (2024-01-01)