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Thermal neutron transmutation doping of GaN semiconductors
High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 10(16) Ge atoms/cm(3) to 10(18) Ge atoms/cm(3). The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7530752/ https://ncbi.nlm.nih.gov/pubmed/33004847 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-72862-2 |
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