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Thermal neutron transmutation doping of GaN semiconductors
High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 10(16) Ge atoms/cm(3) to 10(18) Ge atoms/cm(3). The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group UK
2020
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7530752/ https://ncbi.nlm.nih.gov/pubmed/33004847 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-72862-2 |
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