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Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well laye...
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| Udgivet i: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2020
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7530159/ https://ncbi.nlm.nih.gov/pubmed/33001341 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03420-y |
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