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Resistive Switching of GaAs Oxide Nanostructures
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide wi...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476037/ https://ncbi.nlm.nih.gov/pubmed/32764373 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163451 |
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