Učitavanje...

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configurat...

Cijeli opis

Spremljeno u:
Bibliografski detalji
Izdano u:Materials (Basel)
Glavni autori: He, Huan, Liu, Wenbo, Zhang, Pengbo, Liao, Wenlong, Tong, Dayin, Yang, Lin, He, Chaohui, Zang, Hang, Zong, Hongxiang
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2020
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7475889/
https://ncbi.nlm.nih.gov/pubmed/32824409
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163627
Oznake: Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!