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Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations
Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configurat...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7475889/ https://ncbi.nlm.nih.gov/pubmed/32824409 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163627 |
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