載入...
Carrier mobility of silicon by sub-bandgap time-resolved terahertz spectroscopy
Low density charge mobility from below bandgap, two-photon photoexcitation of bulk silicon (Si) is interrogated using time-resolved terahertz spectroscopy (TRTS). Total charge mobility is measured as a function of excitation frequency and fluence (charge carrier density), cut angle, and innate dopin...
Na minha lista:
| 發表在: | Opt Express |
|---|---|
| Main Authors: | , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
2020
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7473426/ https://ncbi.nlm.nih.gov/pubmed/32225955 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1364/OE.382840 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|