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Carrier mobility of silicon by sub-bandgap time-resolved terahertz spectroscopy
Low density charge mobility from below bandgap, two-photon photoexcitation of bulk silicon (Si) is interrogated using time-resolved terahertz spectroscopy (TRTS). Total charge mobility is measured as a function of excitation frequency and fluence (charge carrier density), cut angle, and innate dopin...
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| Vydáno v: | Opt Express |
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| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7473426/ https://ncbi.nlm.nih.gov/pubmed/32225955 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1364/OE.382840 |
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