Загрузка...
Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing, and hybrid laser-assisted salicidation, that keep...
Сохранить в:
| Опубликовано в: : | Micromachines (Basel) |
|---|---|
| Главные авторы: | , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2020
|
| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7464086/ https://ncbi.nlm.nih.gov/pubmed/32751538 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11080741 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|