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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender to meet CMOS foo...
Tallennettuna:
| Julkaisussa: | Sci Rep |
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| Päätekijät: | , , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6336843/ https://ncbi.nlm.nih.gov/pubmed/30655575 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-36549-z |
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