Spectroscopic Properties of Si-nc in SiO(x) Films Using HFCVD

In the present work, non-stoichiometric silicon oxide films (SiO(x)) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiO(x) films in areas such as optoelect...

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Publicat a:Nanomaterials (Basel)
Autors principals: Hernández Simón, Zaira Jocelyn, Luna López, Jose Alberto, de la Luz, Alvaro David Hernández, Pérez García, Sergio Alfonso, Benítez Lara, Alfredo, García Salgado, Godofredo, Carrillo López, Jesus, Mendoza Conde, Gabriel Omar, Martínez Hernández, Hayde Patricia
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2020
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7407559/
https://ncbi.nlm.nih.gov/pubmed/32698419
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10071415
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