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Spectroscopic Properties of Si-nc in SiO(x) Films Using HFCVD
In the present work, non-stoichiometric silicon oxide films (SiO(x)) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiO(x) films in areas such as optoelect...
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| Опубликовано в: : | Nanomaterials (Basel) |
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| Главные авторы: | , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2020
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7407559/ https://ncbi.nlm.nih.gov/pubmed/32698419 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10071415 |
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