High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nanoscale Res Lett
Prif Awduron: Zhang, Yachao, Li, Yifan, Wang, Jia, Shen, Yiming, Du, Lin, Li, Yao, Wang, Zhizhe, Xu, Shengrui, Zhang, Jincheng, Hao, Yue
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Springer US 2020
Pynciau:
Nano Express
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC7239987/
https://ncbi.nlm.nih.gov/pubmed/32436019
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03345-6
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