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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7239987/ https://ncbi.nlm.nih.gov/pubmed/32436019 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03345-6 |
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