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State dependence and temporal evolution of resistance in projected phase change memory
Phase change memory (PCM) is being actively explored for in-memory computing and neuromorphic systems. The ability of a PCM device to store a continuum of resistance values can be exploited to realize arithmetic operations such as matrix-vector multiplications or to realize the synaptic efficacy in...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7237438/ https://ncbi.nlm.nih.gov/pubmed/32427898 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64826-3 |
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