State dependence and temporal evolution of resistance in projected phase change memory

Phase change memory (PCM) is being actively explored for in-memory computing and neuromorphic systems. The ability of a PCM device to store a continuum of resistance values can be exploited to realize arithmetic operations such as matrix-vector multiplications or to realize the synaptic efficacy in...

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Vydáno v:Sci Rep
Hlavní autoři: Kersting, Benedikt, Ovuka, Vladimir, Jonnalagadda, Vara Prasad, Sousa, Marilyne, Bragaglia, Valeria, Sarwat, Syed Ghazi, Le Gallo, Manuel, Salinga, Martin, Sebastian, Abu
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group UK 2020
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7237438/
https://ncbi.nlm.nih.gov/pubmed/32427898
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64826-3
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