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Projected phase-change memory devices
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power re...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Pub. Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4569800/ https://ncbi.nlm.nih.gov/pubmed/26333363 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9181 |
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