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Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals

X-ray diffraction, Amorphous silicon, Multi-objective optimization, Monte Carlo methods. This paper addresses a difficult inverse problem that involves the reconstruction of a three-dimensional model of tetrahedral amorphous semiconductors via inversion of diffraction data. By posing the material-st...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Limbu, Dil K., Elliott, Stephen R., Atta-Fynn, Raymond, Biswas, Parthapratim
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2020
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC7210951/
https://ncbi.nlm.nih.gov/pubmed/32385360
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64327-3
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